[Pw_forum] Can anyone help me with GaN p type doping

[lan haiping]

Hi,
for doping or charged defects system, you can refer to  Alex Zunger's work.

Regards,

h.p


On 3/14/07, Daya sagar <sagars_daya at yahoo.co.in> wrote:
>
> Hi,
>
>   I am working on GaN nanowires. Can anyone please let me know which
> material should be used as p type dopant for GaN. I tried using Mg and Si as
> p type dopants but they seem to create bonding between 2 Ga atoms and create
> bands in the energygap.
> I would be really thankful if anyone can help me solve this problem.
>
> Thanks.
>
> Regards,
> Sagar.
> *saman ghaderyan <ghaderyan at gmail.com>* wrote:
>
> hi
> i run relaxation for AlAs with nat=4
> Al 0.00 0.00 0.00
> As 0.25 0.25 0.25
> Al 0.50 0.50 0.00
> As -0.25 0.25 0.25
> but i don't know why these atomic position have error
> thanks
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-- 
Hai-Ping Lan
Department of Electronics ,
Peking University , Bejing, 100871
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