<div>Hi, </div>
<div>for doping or charged defects system, you can refer to Alex Zunger's work.</div>
<div> </div>
<div>Regards,</div>
<div> </div>
<div>h.p<br><br> </div>
<div><span class="gmail_quote">On 3/14/07, <b class="gmail_sendername">Daya sagar</b> <<a href="mailto:sagars_daya@yahoo.co.in">sagars_daya@yahoo.co.in</a>> wrote:</span>
<blockquote class="gmail_quote" style="PADDING-LEFT: 1ex; MARGIN: 0px 0px 0px 0.8ex; BORDER-LEFT: #ccc 1px solid">Hi,<br><br> I am working on GaN nanowires. Can anyone please let me know which material should be used as p type dopant for GaN. I tried using Mg and Si as p type dopants but they seem to create bonding between 2 Ga atoms and create bands in the energygap.
<br>I would be really thankful if anyone can help me solve this problem.<br><br>Thanks.<br><br>Regards,<br>Sagar.<br><b><i>saman ghaderyan <<a onclick="return top.js.OpenExtLink(window,event,this)" href="mailto:ghaderyan@gmail.com" target="_blank">
ghaderyan@gmail.com</a>></i></b> wrote:
<blockquote style="PADDING-LEFT: 5px; MARGIN-LEFT: 5px; BORDER-LEFT: rgb(16,16,255) 2px solid">hi<br>i run relaxation for AlAs with nat=4<br>Al 0.00 0.00 0.00<br>As 0.25 0.25 0.25<br>Al 0.50 0.50 0.00<br>As -0.25 0.25 0.25
<br>but i don't know why these atomic position have error<br>thanks<br>_______________________________________________<br>Pw_forum mailing list<br><a onclick="return top.js.OpenExtLink(window,event,this)" href="mailto:Pw_forum@pwscf.org" target="_blank">
Pw_forum@pwscf.org</a><br><a onclick="return top.js.OpenExtLink(window,event,this)" href="http://www.democritos.it/mailman/listinfo/pw_forum" target="_blank">http://www.democritos.it/mailman/listinfo/pw_forum</a><br></blockquote>
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<p></p></p></span></blockquote></div><br><br clear="all"><br>-- <br>Hai-Ping Lan <br>Department of Electronics ,<br>Peking University , Bejing, 100871