[Pw_forum] Can anyone help me with GaN p type doping

[Nichols A. Romero]

Also the papers of Alan Wright and Peter Schultz at Sandia National Labs.

On 3/14/07, lan haiping <lanhaiping at gmail.com> wrote:
>
> Hi,
> for doping or charged defects system, you can refer to  Alex Zunger's
> work.
>
> Regards,
>
> h.p
>
>
> On 3/14/07, Daya sagar <sagars_daya at yahoo.co.in> wrote:
> >
> > Hi,
> >
> >   I am working on GaN nanowires. Can anyone please let me know which
> > material should be used as p type dopant for GaN. I tried using Mg and Si as
> > p type dopants but they seem to create bonding between 2 Ga atoms and create
> > bands in the energygap.
> > I would be really thankful if anyone can help me solve this problem.
> >
> > Thanks.
> >
> > Regards,
> > Sagar.
> > *saman ghaderyan < ghaderyan at gmail.com>* wrote:
> >
> > hi
> > i run relaxation for AlAs with nat=4
> > Al 0.00 0.00 0.00
> > As 0.25 0.25 0.25
> > Al 0.50 0.50 0.00
> > As -0.25 0.25 0.25
> > but i don't know why these atomic position have error
> > thanks
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> >
>
>
> --
> Hai-Ping Lan
> Department of Electronics ,
> Peking University , Bejing, 100871




-- 
Nichols A. Romero, Ph.D.
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