[Wannier] Cu2ZnSnSe and Cu2ZnSnS (Boltzwann Calculations)

Nicki Frank Hinsche nicki.hinsche at physik.uni-halle.de
Thu Sep 1 22:38:05 CEST 2016


Hej Ali, 

this depends heavily on the charge carrier concentration. The difference due to bipolar effects will be way more pronounced at high temperatures and/or low charge carrier concentrations. The size of the gap merely plays a role in the degenerate limit.

bests
Nicki

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Nicki Frank Hinsche, Dr. rer. nat.
HC Ørsted Postdoc
CAMd, Technical University of Denmark
Fysikvej, Bld. 307, Room 208
2800 Kgs. Lyngby, Denmark 
Tel.: ++45 45 25 31 84 
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> Message: 1
> Date: Thu, 1 Sep 2016 10:03:04 +0000
> From: Alex Gal Aziz <A.G.Aziz at pgr.reading.ac.uk>
> To: "wannier at quantum-espresso.org" <wannier at quantum-espresso.org>
> Subject: [Wannier] Cu2ZnSnSe and Cu2ZnSnS (Boltzwann Calculations)
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> 
> I am investigating Cu2ZnSnSe4 and Cu2ZnSnS4.
> 
> 
> I have been using VASP compiled with Wannier functions to generate the initial projections and then generate the MLWF using the Disentanglement procedure. I have checked the band structures and they look correct with the appropriate band gaps (~1.5 for Cu2ZnSnS4 and 0.9 Cu2ZnSnSe4).
> 
> 
> When I check the Seebeck using BoltzWann I seem to get similar results in both cases. I am trying to figure out if this seems plausible due to the difference in band gaps.
> 
> 
> Any suggestions would be welcomed
> 
> 
> Thanks
> 
> Alex Aziz
> 
> 
> PhD Student
> 
> Department of Chemistry, University of Reading
> Whiteknights, Reading RG6 6AD




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