[QE-users] Simulated STM

[Giuseppe Mattioli]

Dear Hussam Bouaamlat (please sign always your posts to the forum with  
name and scientific affiliation)
The negative or positive external potential applied to the STM tip  
roughly corresponds (if you neglect charging effects depending also on  
the tunneling current) to the offset between the Fermi level of your  
system and the maximum/minimum potential of the injected/extracted  
electron in the simulated STM. For one electron, the potential bias  
(in V) corresponds to a given energy offset (in eV), that you can  
easily convert to the value in Rydberg a.u. (1 Ry = 13.606 eV).
HTH
Giuseppe

Quoting HUSSAM BOUAAMLAT <hussam.bouaamlat at usmba.ac.ma>:

> Dear QE users,
>
> I am trying to simulate STM images, the only problem I have is the bias
> voltage.
> in experimental we use, for example, V = 0.3 V, but when I use QE I have to
> use atomic units. So what is the value I need to get the same V = 0.3V
> value? I'm sorry if this question sounds trivial.
>
> Best regards,



GIUSEPPE MATTIOLI
CNR - ISTITUTO DI STRUTTURA DELLA MATERIA
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