[Pw_forum] deformation potential for polar semiconductor

[Nandan Tandon]

Hello,

I was not sure if the mail was circulating since i did not receive a
copy. I did not know that was normal.

Now to my problem.

I am trying to evaluate the electron-phonon coupling in GaAs using the
EPW code. EPW requires the deformation potential and the dynamical
matrix (DM) evaluated at all the points in the IBZ.

For polar semiconductor like GaAs, the LO-TO splitting is not correctly
evaluated at the Gamma point. The correct splitting can be evaluated
separately by adding the non-analytic term. This i understand.

What i am trying to find out is whether the DM & deformation potential
can be evaluated
so that it includes the effect of additional non-analytic term.

I hope this more coherent!

Regards,

Nandan.

On Thu, Jun 7, 2012 at 12:03 PM, Lorenzo Paulatto
<lorenzo.paulatto at impmc.upmc.fr> wrote:
> Dear Nandan,
> if nobody answers to your question it may be because nobody can understand
> it clearly
>
> Please take some time to reformulate your question more clearly and, instead
> of just repeating it.
>
> Kind regards.
>
> --
> Lorenzo Paulatto IdR @ IMPMC/CNRS & Université Paris 6
> phone: +33 (0)1 44275 084 / skype: paulatz
> www:   http://www-int.impmc.upmc.fr/~paulatto/
> mail:  23-24/4é16 Boîte courrier 115, 4 place Jussieu 75252 Paris Cédex 05
>
>
>



--
***********************************************************************************************
Nandan Tandon
Department of Physics,
Worcester Polytechnic Institute,
100 Institute Road,
Worcester, MA
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-- 
***********************************************************************************************
Nandan Tandon
Department of Physics,
Worcester Polytechnic Institute,
100 Institute Road,
Worcester, MA
*************************************************************************************************