<div dir="ltr"><div>I am not sure I understand your problem and don't know whether the following is relevant: <br>in a semiconductor, the Fermi energy may be anywhere between the top of the valence band (plus a few time the broadening) and the bottom of the conduction band (minus a few times the broadening). The algorithm that locates the Fermi energy knows nothing about the middle of the gap.<br><br></div>Paolo<br></div><div class="gmail_extra"><br><div class="gmail_quote">On Thu, Jul 5, 2018 at 8:17 AM, Rajneesh Chaurasiya <span dir="ltr"><<a href="mailto:rajnano2012@gmail.com" target="_blank">rajnano2012@gmail.com</a>></span> wrote:<br><blockquote class="gmail_quote" style="margin:0 0 0 .8ex;border-left:1px #ccc solid;padding-left:1ex"><div dir="ltr"><div>Dear All,</div><div><br></div><div>I have computed the electronic band structure under the compression and tensile strain. Change in the conduction band minima and valance band maxima are slightly shifted with strain which i have also verified from the WIEN2K but when i add or subtract the Fermi energy, then i observed in some cases, Fermi level close to conduction and some cases the Fermi energy close to valance band. since by applying the strain the types of semiconductor behavior (n type or p type) does not change. then why the Fermi level is shifted close to valance band maxima or conduction band minima. such types of behavior are not observed in the WIEN2k. why the Fermi level is shifted according to strain? <br></div><span class="HOEnZb"><font color="#888888"><div><br>-- <br><div class="m_-8880283300118064906gmail_signature" data-smartmail="gmail_signature"><div dir="ltr"><div><div dir="ltr"><div><div dir="ltr"><div><div dir="ltr">Thanks & Regards<div>Rajneesh Chaurasiya</div><div>Research Scholar<br></div><div>IIT Jodhpur, India<br></div><div>Mob. No. +91-9584499697<br> +91-7610950803<br></div></div></div></div></div></div></div></div></div>
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