&control
    calculation="relax",
    restart_mode='from_scratch',
    prefix='GaN',
    pseudo_dir='./pseudo/',
    outdir='./tempdir/',
    tstress = .true.,
    etot_conv_thr = 0.000001,
    forc_conv_thr = 0.00001,
 /
&system
    ibrav= 4,
    celldm(1) = 6.0134,
    celldm(3)=    1.63,
    nat= 4, 
    ntyp= 2,
    ecutwfc = 50.0
    occupations = 'fixed',
 /
 &electrons
    diagonalization='david',
    conv_thr =  1.0d-10,
    mixing_beta = 0.5,
    startingwfc='random',
    efield_cart(1)=0.d0,efield_cart(2)=0.d0,efield_cart(3)= 0.0d0,

 /
&IONS
    ion_dynamics = 'bfgs',
 / 
&CELL
    cell_dynamics = 'bfgs',
    cell_dofree = 'all',
    press_conv_thr = 1.0d-3,
 /
ATOMIC_SPECIES
 N 14.0037 N.pbesol-n-kjpaw_psl.0.1.UPF
 Ga 69.723 Ga.pbesol-dn-kjpaw_psl.0.2.UPF
ATOMIC_POSITIONS crystal
Ga       0.333333299   0.666666701  -0.000881117
Ga       0.666666701   0.333333299   0.499404609
N        0.333333438   0.666666562   0.375695838
N        0.666666562   0.333333438   0.875780669
K_POINTS {automatic}
 10 10 8 0 0 0

