Dear All,<br>This is my second email and I highly appreciate your help in this regard.<br>
I am working on Si/SiO2 system, at the moment.<br>
<br>
1. I was wondering whether the sum of all LDOS calculated from projected<br>
wavefunction on the Si at the interface can give me the density of interface<br>
states. The question is whether the sum of LDOS of projected wavefunction on<br>
the inter-facial atoms is equivalent to planar local density of state at the<br>
interface.<br>
2. If positive, the sum of LDOS of all projected wavefunction on all<br>
atoms at the interface divided by the surface of the interface is by far<br>
higher than the Dit reported from experiment. Actually, I am thinking, no<br>
matter how big the structure is, the Dit is still very high. I was wondering<br>
whether I miss any point to consider for calculation.<br>
<br>
I really really appreciate your help.<br>
Have a great summer.<br>
M Alaaii